2D flash-silicon chip achieves record speed, 94
The breakthrough device supports eight-bit instruction operations and 32-bit high-speed parallel operations with random access,
Fudan''s PoX Device: A Quantum Leap in Memory Speed
With its unprecedented picosecond-level flash memory innovation, the PoX device is poised to redefine our approach to analytics, hastening the end of speed limits that once
2D flash-silicon chip achieves record speed, 94% memory yield
The breakthrough device supports eight-bit instruction operations and 32-bit high-speed parallel operations with random access, achieving a 94.3 percent memory cell yield.
[News] Chinese Research Team Developed Ultra-High-Speed
This marks the fastest semiconductor charge storage technology in the world so far, achieving almost the same storage and computing speed. Once large-scale integration is
New graphene-based flash memory writes data in 400
Researchers at Fudan University in Shanghai have unveiled a flash memory device that breaks speed records once thought unreachable. Dubbed "PoX," the device can program
Ultra-High-Speed Flash Memory Created by Chinese Researchers
Researchers at Fudan University have made a significant advancement in integrated circuit technology. The team led by Zhou Peng and Liu Chunsen has developed
Powering Lebanon''s Future: How Fudan Energy Storage Is
Enter Fudan energy storage solutions – the silent guardian angels of modern power infrastructure. Let''s explore why this technology matters and how it could flip the script
Researchers develop flash memory device
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented program speed of 400
World''s fastest Flash memory developed: writes in just 400
Setting a new benchmark for Flash memory performance, a team of researchers at Fudan University in Shanghai has developed a super-fast, picosecond-level non-volatile
Fudan University Develops World''s Fastest Picosecond Flash Memory Device
Fudan University has developed the "Dawn" picosecond flash memory device, achieving a record-breaking erase and write speed of 400 picoseconds, revolutionizing data
Researchers develop flash memory device
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an
Ultra-High-Speed Flash Memory Created by
Researchers at Fudan University have made a significant advancement in integrated circuit technology. The team led by Zhou Peng
Fudan University researchers create record-breaking flash memory device
Described by Zhou Peng, a leading researcher from the university''s State Key Laboratory of Integrated Chips and Systems, as operating “1 billion times in the blink of an